View IRAMX16UP60A08_4733705.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 features iramx16up60a series 16a, 600v integrated power hybrid ic for appliance motor drive applications. description international rectifier's iramx16up60a is an integrated power module developed and optimized for elec- tronic motor control in appliance applications such as washing machines and variable speed compressor drives for in-room air-conditioning systems and commercial refrigerators. plug n drive technology offers an extremely compact, high performance ac motor-driver in a single isolated package for a very simple design. an open emitter configuration of the low side igbt switches offer easy current feedback and overcurrent monitor for high precision and reliable control. a built-in temperature monitor and over-current protection, along with the short-circuit rated igbts and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. the integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. pd-94684 revd ? integrated gate drivers and bootstrap diodes. ? temperature monitor ? temperature and overcurrent shutdown ? fully isolated package. ? low vce (on) non punch through igbt technology. ? undervoltage lockout for all channels ? matched propagation delay for all channels ? low side igbt emitter pins for current control ? schmitt-triggered input logic ? cross-conduction prevention logic ? lower di/dt gate driver for better noise immunity ? motor power range 0.75~2kw / 85~253 vac ? isolation 2000v rms min absolute maximum ratings parameter description value units v ces / v rrm igbt/diode blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c rms phase current (note 1) 16 i o @ t c =100c rms phase current (note 1) 8 i o pulsed rms phase current (note 2) 30 f pwm pwm carrier frequency 20 khz p d power dissipation per igbt @ t c =25c 31 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diodes) operating junction temperature range -40 to +150 t j (driver ic) operating junction temperature range -40 to +150 t mounting torque range (m3 screw) 0.5 to 1.0 nm note 1: sinusoidal modulation at v + =400v, t j =150c, f pwm =16khz, modulation depth=0.8, pf=0.6, see figure 3. note 2: t p <100ms; t c =25c; f pwm =16khz. limited by i bus-itrip , see table "inverter section electrical characteristics" v a c
iramx16up60a 2 www.irf.com internal electrical schematic - iramx16up60a 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 vru (12) vrw (14) vrv (13) vb1 (7) u, vs1 (8) vb2 (4) v, vs2 (5) vb3 (1) w, vs3 (2) thermistor r 3 vcc (22) vss (23) r 1 r 2 c rg1 rg3 rg5 driver ic r t lo1 16 lo3 14 lo2 15 rg2 rg4 rg6 t/i trip (21) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) v (10) +
iramx16up60a www.irf.com 3 inverter section electrical characteristics @t j = 25c symbol parameter min typ max units v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v (br)ces / t temperature coeff. of breakdown voltage --- 0.3 --- v/c --- 1.55 1.85 --- 1.80 2.10 --- 5 80 v in =5v, v + =600v --- 165 --- v in =5v, v + =600v, t j =150c --- 2.0 2.4 --- 1.4 1.9 i c =8a, t j =150c -- -- 1.25 --- --- 1.10 r br bootstrap resistor value --- 22 --- r br /r br bootstrap resistor tolerance --- --- 5 % t j =25c t j =25c i c =8a i f =1a i f =1a, t j =125c i c =8a, v cc =15v, t j =150c i c =8a, v cc =15v v v bdfm bootstrap diode forward voltage drop v v fm diode forward voltage drop conditions i ces zero gate voltage collector current a v ce(on) collector-to-emitter saturation voltage v v in =5v, i c =1.0ma (25c - 150c) v in =5v, i c =250a symbol parameter min max units i bdf bootstrap diode peak forward current --- 4.5 a p br peak bootstrap resistor peak power (single pulse) --- 25.0 w v s1,2,3 high side floating supply offset voltage v b1,2,3 - 25 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in, v en input voltage lin, hin, en -0.3 lower of (v ss +15v) or v cc +0.3v v absolute maximum ratings (continued) all voltages are absolute referenced to com conditions t p = 10ms, t j = 150c, t c =100c t p =100s, t c =100c esr / erj series
iramx16up60a 4 www.irf.com inverter section switching characteristics @ t j = 25c symbol parameter min typ max units e on turn-on switching loss --- 315 435 e off turn-off switching loss --- 150 180 e tot total switching loss --- 465 615 e rec diode reverse recovery energy --- 30 60 t rr diode reverse recovery time --- 70 90 ns e on turn-on switching loss --- 500 700 e off turn-off switching loss --- 270 335 e tot total switching loss --- 770 1035 e rec diode reverse recovery energy --- 60 100 t rr diode reverse recovery time --- 120 150 ns q g turn-on igbt gate charge --- 56 84 nc rbsoa reverse bias safe operating area scsoa short circuit safe operating area 10 --- --- s i csc short circuit collector current --- 140 --- a j j i c =15a, v + =400v, v ge =15v t j =150c, i c =8a, v p =600v v + = 450v v cc =+15v to 0v see ct3 t j =150c, v p =600v, v + = 360v, v cc =+15v to 0v see ct2 t j =150c, v p =600v, t sc <10s v + = 360v, v ge =15v v cc =+15v to 0v see ct2 full square conditions i c =8a, v + =400v v cc =15v, l=2mh energy losses include "tail" and diode reverse recovery see ct1 i c =8a, v + =400v v cc =15v, l=2mh, t j =150c energy losses include "tail" and diode reverse recovery see ct1 recommended operating conditions driver function symbol definition min max units v b1,2,3 high side floating supply voltage v s +12 v s +20 v s1,2,3 high side floating supply offset voltage note 4 450 v cc low side and logic fixed supply voltage 12 20 v t/itrip t/i trip input voltage v ss v ss +5 v in logic input voltage lin, hin v ss v ss +5 v note 3: for more details, see ir21365 data sheet the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommende conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential (note 3) v v note 4: logic operational for v s from com-5v to com+600v. logic state held for v s from com-5v to com-v bs . (please refer to dt97-3 for more details)
iramx16up60a www.irf.com 5 dynamic electrical characteristics symbol parameter min typ max units conditions t on input to output propagation turn- on delay time (see fig.11) --- 590 --- ns t off input to output propagation turn- off delay time (see fig. 11) --- 660 --- ns t flin input filter time (hin, lin) 100 200 --- ns v in =0 & v in =5v t blt-trip i trip blancking time 100 150 ns v in =0 & v in =5v d t dead time (v bs =v dd =15v) 220 290 360 ns v bs =v cc =15v m t matchin g propa g ation delay time (on & off) --- 40 75 ns v cc = v bs = 15v, external dead time> 400ns t itrip i trip to six switch to turn-off propagation delay (see fig. 2) --- --- 1.75 s v cc =v bs = 15v, i c =8a, v + =400v --- 7.7 --- t c = 25c --- 6.7 --- t c = 100c post i trip to six switch to turn-off clear time (see fig. 2) t flt-clr ms driver only timing unless otherwise specified. v cc =v bs = 15v, i c =8a, v + =400v static electrical characteristics driver function symbol definition min typ max units v ih logic "0" input voltage 3.0 --- --- v v il logic "1" input voltage --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs supply undervoltage positive going threshold 10.6 11.1 11.6 v v ccuv-, v bsuv- v cc and v bs supply undervoltage negative going threshold 10.4 10.9 11.4 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 --- v v in, clamp input clamp voltage (hin, lin, t/i trip ) i in =10a 4.9 5.2 5.5 v i qbs quiescent v bs supply current v in =0v --- --- 165 a i qcc quiescent v cc supply current v in =0v --- --- 3.35 ma i lk offset supply leakage current --- --- 60 a i in+ input bias current v in =5v --- 200 300 a i in- input bias current v in =0v --- 100 220 a t/i trip+ t/i trip bias current v itrip =5v --- 30 100 a t/i trip- t/i trip bias current v itrip =0v --- 0 1 a v(t/i trip )t/i trip threshold voltage 3.85 4.30 4.75 v v(t/i trip ,hys) t/i trip input hysteresis --- 0.07 --- v v bias (v cc , v bs1,2,3 )=15v, unless otherwise specified. the v in and i in parameters are referenced to com and are applicable to all six channels. (note 3)
iramx16up60a 6 www.irf.com input-output logic level table flt- en i trip hin1,2,3 lin1,2,3 u,v,w 1001 v + 10100 1011off 11xxoff 0xxxoff ho lo u, v,w ic driver v + hin1,2,3 lin1,2,3 (15,16,17) (18,19,20) (8,5,2) thermal and mechanical characteristics symbol parameter min typ max units conditions r th(j-c) thermal resistance, per igbt --- 3.5 4.0 r th(j-c) thermal resistance, per diode --- 5.0 5.5 r th(c-s) thermal resistance, c-s --- 0.1 --- c d creepage distance 3.2 --- --- mm see outline drawings c/w flat, greased surface. heatsink compound thermal conductivity 1w/mk internal ntc - thermistor characteristics parameter definition min typ max units conditions r 25 resistance 97 100 103 k t c = 25c r 125 resistance 2.25 2.52 2.80 k t c = 125c b b-constant (25-50c) 4165 4250 4335 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 125 c typ. dissipation constant 1 mw/c t c = 25c
iramx16up60a www.irf.com 7 note 5: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. t/i trip lin1,2,3 hin1,2,3 t flt-clr 50% 50% u,v,w 50% t t/itrip 50% t/i trip u,v,w lin1,2,3 hin1,2,3
iramx16up60a 8 www.irf.com module pin-out description 1 23 pin name description 1 v b3 high side floating supply voltage 3 2 u, v s3 output 3 - high side floating supply offset voltage 3nanone 4 v b2 high side floating supply voltage 2 5 v,v s2 output 2 - high side floating supply offset voltage 6nanone 7 v b1 high side floating supply voltage 1 8 w,v s1 output 1 - high side floating supply offset voltage 9nanone 10 v + positive bus input voltage 11 na none 12 l e1 low side emitter connection - phase 1 13 l e2 low side emitter connection - phase 2 14 l e3 low side emitter connection - phase 3 15 h in1 logic input high side gate driver - phase 1 16 h ni2 logic input high side gate driver - phase 2 17 h in3 logic input high side gate driver - phase 3 18 l in1 logic input low side gate driver - phase 1 19 l in2 logic input low side gate driver - phase 2 20 l in3 logic input low side gate driver - phase 3 21 t/i trip temperature monitor and shut-down pin 22 v cc +15v main supply 23 v ss negative main supply
iramx16up60a www.irf.com 9 typical application connection iramx16up60a 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor- mance. 2. in order to provide good decoupling between v cc -v ss and v b1,2,3 -v s1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. additional high frequency capacitors, typi- cally 0.1f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044 or figure 9. bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the v cc . (see maximum ratings table on page 3). 4. after approx. 8ms the fault is reset. (see dynamic characteristics table on page 5). 5. pwm generator must be disabled within fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 0 3 5 - z 2 l 0 3 iramx16up60a 1 2 3 3-phase ac motor boot-strap capacitors u v w controller v+ dc bus capacitors phase leg current sense o/c sense (active low) current sensing can use a single sense resistor or phase leg sensing as shown cb v b3 v b2 v b1 v s3 v s3 v s1 pgnd v cc (15 v) i trip v ss l e1 l e2 l e3 h in1 h in2 h in3 l in1 l in2 l in3 3.3 v 5k 1mf temp sense o/c sense (active low) 10mf 6.8k 10.2k 0.1mf dgnd
iramx16up60a 10 www.irf.com figure 3. maximum sinusoidal phase current vs. pwm switching frequency v + =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 4. maximum sinusoidal phase current vs. modulation frequency v + =400v, t j =150c, t c =100c, modulation depth=0.8, pf=0.6 110100 0 2 4 6 8 10 t j = 150c sinusoidal modulation maximum output phase rms current - a modulation frequency - hz f pwm = 20khz f pwm = 16khz f pwm = 12khz 0 2 4 6 8 101214161820 0 2 4 6 8 10 12 14 t j = 150c sinusoidal modulation maximum output phase rms current - a pwm frequency - khz t c = 100c t c = 110c t c = 120c
iramx16up60a www.irf.com 11 figure 5. total power losses vs. pwm switching frequency, sinusoidal modulation v + =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 6. total power losses vs. output phase current, sinusoidal modulation v bus =400v , t j =150c, modulation depth=0.8, pf=0.6 0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 t j = 150c sinusoidal modulation total power losses - w output phase current - a rms f pwm = 12 khz f pwm = 16 khz f pwm = 20 khz 0123456789101112 0 25 50 75 100 125 150 t j = 150c sinusoidal modulation total power losses - w output phase current - a rms f pwm = 12 khz f pwm = 16 khz f pwm = 20 khz
iramx16up60a 12 www.irf.com figure 7. maximum allowable case temperature vs. output rms current per phase figure 8. estimated maximum igbt junction temperature vs. thermistor temperature 02468101214 0 20 40 60 80 100 120 140 160 t j = 150c sinusoidal modulation maximum allowable case temperature -c output phase current - a rms f pwm = 12 khz f pwm = 16 khz f pwm = 20 khz 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 thermistor temperature [c] igbt junction temperatur e
iramx16up60a www.irf.com 13 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 thermistor temperature - c thermistor pin read-out volta g min a vg max figure 10. recommended bootstrap capacitor value vs. switching frequency 0 5 10 15 20 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 6.8f r bs d bs c bs r g1 r g2 v s h o l o co m v b v cc h in l in +15v v ss v + h in l in u,v,w gnd v ss 3.3f 4.7f 10f recommended bootstrap capacitor - f pwm frequency - khz 15f figure 9. thermistor readout vs. temperature (6.8kohm, 1% pull down resistor) and nominal thermistor resistance values vs. temperature table. t therm r therm t therm r therm t therm r therm c c c -40 4397119 25 100000 90 7481 -35 3088599 30 79222 95 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 5 272500 70 15184 10 209710 75 12635 15 162651 80 10566 20 127080 85 8873 r therm 12k 6.8k v therm
iramx16up60a 14 www.irf.com figure 11. switching parameter definitions figure 11a. input to output propagation turn-on delay time figure 11b. input to output propagation turn-off delay time figure 11c. diode reverse recovery 50% h in /l in v ce i c h in /l in t off t f 90% i c 10% i c 50% v ce v ce i c h in /l in t on t r 50% h in /l in 90% i c 10% i c 50% v ce v ce i f h in /l in t rr i rr
iramx16up60a www.irf.com 15 figure ct1. switching loss circuit figure ct2. s.c.soa circuit figure ct3. r.b.soa circuit ho lo u,v,w ic driver v + lin1,2,3 5v hin1,2,3 ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o i n i o i n i o i n i o
iramx16up60a 16 www.irf.com package outline iramx16up60a for mounting instruction see an-1049 notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking 4- convex only 0.15mm typical 5- tollerances 0.5mm, unless otherwise stated 035-z2l03 note 1 iramx16up60a m note 3 note 2
iramx16up60a www.irf.com 17 data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 07/05 package outline iramx16up60a-2 notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking 4- convex only 0.15mm typical 5- tollerances 0.5mm, unless otherwise stated for mounting instruction see an-1049 035-z2l03 m iramx16up60a note 3 note 2 note 1

▲Up To Search▲

Price & Availability of IRAMX16UP60A08

	To Download IRAMX16UP60A08 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .